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Radiation hardness and lifetime studies of photodiodes for the optical readout of the ATLAS semiconductor tracker

机译:用于ATLAS半导体跟踪器光学读出的光电二极管的辐射硬度和寿命研究

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摘要

A large sample (96) of epitaxial Si PIN photodiodes has been irradiated by ~1 MeV neutrons and 24 GeV protons with fluences up to 10E15 equivalent 1 MeV neutrons per square cm in order to test their suitability for use in the optical readout of the ATLAS semiconductor tracker and pixel detector at the CERN Large Hadron Collider. After an initial reduction of 30the responsivity remains constant up to the maximum fluence. The rise and fall times are not significantly affected and remain below 1 ns. Although the dark current increases linearly with increasing neutron fluence, its level remains below 100 nA which is negligible in comparison to the operating photocurrent which is above 100 microamps. Enhance ageing studies at 60 degrees C have also been carried out and no failure has occurred after an equivalent of 360 years of operation.
机译:已用〜1 MeV中子和24 GeV质子辐照了大样本外延Si PIN光电二极管(96),其通量可达每平方厘米10E15当量1 MeV中子,以测试其在ATLAS光学读数中的适用性CERN大型强子对撞机的半导体跟踪器和像素检测器。初始降低30后,响应度将保持恒定,直到最大通量。上升和下降时间没有受到明显影响,并且保持在1 ns以下。尽管暗电流随中子注量的增加而线性增加,但其水平保持在100 nA以下,与工作光电流高于100微安相比,这可以忽略不计。还进行了60摄氏度的增强老化研究,经过360年的运行,没有发生任何故障。

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